At the sixth annual Samsung Mobile Solution Forum, Samsung officially announced on September 22 that the company has begun mass production of 512Mb PRAM (Phase-change Random Access Memory), a new non-volatile memory technology featuring the advantages of NAND and NOR flash memories, according to a press release by Samsung on September 22.

Samsung stated that PRAM can rewrite data without having to first erase data previously accumulated and thus the 512Mb PRAM is around 30 times faster than conventional flash memories and is over 10 times faster than NOR flash memory. The advanced technology features high performance and low power consumption, making the technology ideal for use in mobile devices, such as Smartphones as it can extend mobile phone battery life by over 20%, according to the same source. Samsung also said that its first RRAM is produced based on 60nm technology, the same technology used in the manufacturing of NOR flash memory nowadays, and PRAM using finer processing technology will be available soon.